MojoKid writes: Recently, a few details of AMD's next-generation Radeon 300-series graphics cards have trickled out. Today, AMD has publicly disclosed new info regarding their High Bandwidth Memory (HBM) technology that will be used on some Radeon 300-series and APU products. Currently, a relatively large number of GDDR5 chips are necessary to offer sufficient capacity and bandwidth for modern GPUs, which means significant PCB real estate is consumed. On-chip integration is not ideal for DRAM because it is not size or cost effective with a logic-optimized GPU or CPU manufacturing process. HBM, however, brings the DRAM as close to possible to the logic die (GPU) as possible. AMD partnered with Hynix and a number of companies to help define the HBM specification and design a new type of memory chip with low power consumption and an ultra-wide bus width, which was eventually adopted by JEDEC 2013. They also develop a DRAM interconnect called an "interposer," along with ASE, Amkor, and UMC. The interposer allows DRAM to be brought into close proximity with the GPU and simplifies communication and clocking. HBM DRAM chips are stacked vertically, and "through-silicon vias" (TSVs) and "bumps" are used to connect one DRAM chip to the next, and then to a logic interface die, and ultimately the interposer. The end result is a single package on which the GPU/SoC and High Bandwidth Memory both reside. 1GB of GDDR5 memory (four 256MB chips), requires roughly 672mm2. Because HBM is vertically stacked, that same 1GB requires only about 35mm2. The bus width on an HBM chip is 1024-bits wide, versus 32-bits on a GDDR5 chip. As a result, the High Bandwidth Memory interface can be clocked much lower but still offer more than 100GB/s for HBM versus 25GB/s with GDDR5. HBM also requires significantly less voltage, which equates to lower power consumption.